Serving as a carrier for high-performance semiconductor chip packaging, the HTCC substrate/package provides electrical connectivity, protection, mechanical support, and thermal dissipation for the chip. Driven by a combination of electrical, thermal, dimensional, functional, and cycle-time cost requirements, packaging substrates are evolving toward thinner profiles, enhanced thermal dissipation, finer circuitry, higher integration density, and shorter manufacturing cycles.

Slightly different from the BT resin substrates commonly used in the semiconductor industry, HTCC substrates mainly exhibit the following characteristics:

a)      Good thermal matching with semiconductor chips, with a close coefficient of thermal expansion, enabling highly reliable packaging.

b)      High wiring density, supporting up to 24 wiring layers with a minimum line width of 60 μm.

c)      Use of tungsten as the conductor material, ensuring highly reliable electrical performance.

d)      Capability for multi-cavity processing, facilitating partitioning and isolation.

e)      Ability to withstand harsh operating environments, making it suitable for applications with high-reliability requirements.

f)       Compatibility with AuSn eutectic bonding and parallel seam welding, enabling reliable hermetic packaging that meets GJB (Chinese National Military Standard) requirements.

g)      Good compatibility with metals, allowing flexible implementation of various packaging forms and structures.